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Temperature Dependence of the Optical Properties of Manganese‐Doped Cu 2 GeSe 3
Author(s) -
Echeverría R.,
Nieves L.,
Marcano G.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200007)220:1<285::aid-pssb285>3.0.co;2-h
Subject(s) - debye model , band gap , manganese , absorption edge , semiconductor , condensed matter physics , doping , materials science , debye , photon energy , phonon , atmospheric temperature range , attenuation coefficient , lattice constant , analytical chemistry (journal) , diffraction , photon , chemistry , optics , thermodynamics , physics , optoelectronics , chromatography , metallurgy
The optical absorption on synthesized Mn‐doped Cu 2 GeSe 3 samples was made to determine the variation of the energy gap E g as a function of temperature in the range 9 to 300 K at photon energies hν = 0.81 to 0.50 eV. The data are analyzed by considering the Manoogian‐Woolley equation and using the Varshni relation for the temperature dependence of semiconductor band gaps. The formula is shown to be compatible with the assumption about the influence of phonons on the band gap energy. Above about 100 K the temperature coefficient of the fundamental edge is d E g /d T = —1.5 × 10 —4 eV K. The estimated value of the Debye temperature is in agreement with θ D = 170 K reported from specific heat measurements. Additionally, a band gap shift due to the incorporation of manganese in the crystal lattice was observed. The results are discussed in regard to some general trends found in the I 2 –IV–VI 3 compounds.