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Determination of the Exciton Binding Energy in ZnCdSe Quantum Wells by Resonant Raman Scattering
Author(s) -
HernándezRamírez L.M.,
HernándezCalderón I.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200007)220:1<205::aid-pssb205>3.0.co;2-c
Subject(s) - exciton , quantum well , raman scattering , binding energy , atomic physics , scattering , resonance (particle physics) , biexciton , raman spectroscopy , laser , phonon , chemistry , physics , condensed matter physics , optics
Due to the relevant role of excitonic emission in blue‐green diodes and lasers based on Zn 1– x Cd x Se quantum wells important efforts, in theory and experiment, have been carried out to determine the excitonic binding energy as a function of composition and quantum well width. In this work we present a direct determination of the binding energy of the free exciton of a 50 Å Zn 0.74 Cd 0.26 Se quantum well confined by ZnSe barriers by means of the observation of the resonant Raman scattering (RRS) effect. We show that the RRS is due to a double resonance: the first (incoming) is produced by the matching of the exciting laser line (488 nm, 2.5407 eV) with the 1hh → 1e absorption transition of the QW; the second (outgoing) is due to the close coincidence of the exciton binding energy and the LO phonon energy. From these results we have obtained 32.6 ± 2 meV for the free exciton binding energy.