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Effect of the Conduction Band Non‐Parabolicity on D 0 Binding Energy in a GaAs/Ga 0.7 Al 0.3 As Spherical Quantum Dot
Author(s) -
García C.,
Mikhailov I.D.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200007)220:1<201::aid-pssb201>3.0.co;2-s
Subject(s) - conduction band , quantum dot , chemistry , condensed matter physics , binding energy , ground state , atomic physics , physics , quantum mechanics , electron
The ground state binding energy of a donor centered in a GaAs/Ga 0.7 Al 0.3 As spherical quantum dot is calculated, by using a numerical procedure based on trigonometric sweep method. It is considered a model that takes into account the effects produced by (i) a graded variation of Al concentration at the interface, (ii) the dependence of the material parameters on the Al concentration and (iii) the non‐parabolicity of the GaAs conduction band. Comparing to previous results, obtained for a model with a spherical rectangular potential, a considerable binding energy enhancement, ranging from 20 to 50% for different quantum dot radii, has been found.