Premium
Self‐Polarization Energies of Semiconductor Quantum Dots with Finite Confinement Barriers
Author(s) -
Bolcatto P.G.,
Proetto C.R.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200007)220:1<191::aid-pssb191>3.0.co;2-x
Subject(s) - quantum dot , polarization (electrochemistry) , dielectric , exciton , condensed matter physics , semiconductor , physics , dielectric function , quantum mechanics , chemistry
We have calculated the self‐polarization energies for partially confined excitons by using the effective mass approximation and in the strong confinement regime. In order to avoid the unphysical divergence introduced by the step‐like model for the dielectric function ε ( r ), we have defined a finite size dielectric interface in which the ε ( r ) changes smoothly from its dot value up to the matrix value. The validity of the macroscopic dielectric approach was checked performing complementary calculations considering a coordinate‐ and size‐dependent dielectric function. We have found that, depending on the thickness of the interface, the self‐polarization energy Σ can reach very different values having a direct impact on the excitonic energies, which can be greater than those corresponding to a perfect confinement or practically zero for a wide range of dot sizes.