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Hole Energy Levels in p‐Type δ‐Doped Si Quantum Wells: Influence of the Split‐Off Band
Author(s) -
GaggeroSager L.M.,
MoraRamos M.E.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200007)220:1<163::aid-pssb163>3.0.co;2-0
Subject(s) - doping , quantum well , energy (signal processing) , condensed matter physics , materials science , optoelectronics , physics , engineering physics , optics , quantum mechanics , laser
Electronic structure calculations in p‐type B δ‐doped Si quantum wells are carried out self‐consistently and within the Thomas‐Fermi approximation. The calculations assume a three independent (hh + lh + so) hole band model. The numerically calculated spectra are compared between themselves and with experimental results, making emphasis on the effects of the inclusion of the so hole band. The use of a three‐independent band model is presented for the first time in a Thomas‐Fermi approximation. Despite of the simplicity of this theory, comparison of the obtained results with self‐consistent theoretical calculations gives good agreements.