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Micro‐Raman Studies of Al x Ga 1—x P/GaP Graded Structures
Author(s) -
Zamora E.,
Díaz P.,
JiménezSandoval S.,
GonzálezRaña C.,
Prutskij T.A.,
Mishurni V.,
Merkulov A.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200007)220:1<141::aid-pssb141>3.0.co;2-g
Subject(s) - raman spectroscopy , phonon , materials science , condensed matter physics , molecular physics , chemistry , optics , physics
We report applications of the micro‐Raman technique to study the compositional dependence of phonon modes in graded Al x Ga 1— x P layers. The dependence of the phonon frequencies on the Al content was monitored in a single sample for two different crystallographic orientations. The measured compositional dependence of the LO and TO phonon frequencies are in good agreement with results of calculations based on the Modified Random Element Isodisplacement (MREI) model. The Raman spectra of the samples reveal also the existence of other features due to disorder.