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Galvanomagnetic Effects in Cu 2 GeSe 3
Author(s) -
Bracho D.,
Marcano G.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200007)220:1<127::aid-pssb127>3.0.co;2-0
Subject(s) - magnetoresistance , condensed matter physics , impurity , hall effect , ternary operation , materials science , thermal conduction , melting point , compound semiconductor , metal , magnetic field , chemistry , nanotechnology , metallurgy , physics , composite material , epitaxy , organic chemistry , layer (electronics) , quantum mechanics , computer science , programming language
The ternary semiconducting compound Cu 2 GeSe 3 is of considerable interest, because it has a low melting point (MP ≈ 770 °C) which makes this materials a potential candidate for acousto‐optical applications. In this work, measurements of the Hall coefficient R H and the transverse magnetoresistance (Δ ρ / ρ ) of p‐type Cu 2 GeSe 3 were realized. The measurements were carried out at temperatures of 100 to 250 K in magnetic fields from 0 to 1.6 T. This compound exhibits a metallic impurity conduction at temperatures above 150 K and present a thermally activated transport mechanism at low temperatures. In this semiconductor, magnetoresistance of both positive and negative signs was observed.