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Polaron Properties in GaN and AlN
Author(s) -
MoraRamos M.E.,
Rodríguez F.J.,
Quiroga L.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200007)220:1<111::aid-pssb111>3.0.co;2-s
Subject(s) - polaron , wurtzite crystal structure , effective mass (spring–mass system) , hamiltonian (control theory) , condensed matter physics , anisotropy , phonon , dielectric , electron , materials science , nitride , polarization (electrochemistry) , physics , chemistry , quantum mechanics , optoelectronics , nanotechnology , mathematical optimization , mathematics , layer (electronics) , diffraction
The polaron binding energy and effective mass are obtained for bulk III–V nitride compounds with wurtzite crystalline structure with the use of a recently derived dielectric continuum Fröhlich‐like electron–phonon interaction Hamiltonian. Corrections are calculated up to second order in the coupling constants. Numerical results are reported for GaN and AlN. Effects of phonon polarization mixing are studied and its relevance to the effective mass anisotropy is discussed. For GaN, the calculated effective mass coincides with reported experimental values.