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Investigation of Oxygen‐Related Luminescence Centres in AlN Ceramics
Author(s) -
Schweizer S.,
Rogulis U.,
Spaeth J.M.,
Trinkler L.,
Berzina B.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200005)219:1<171::aid-pssb171>3.0.co;2-0
Subject(s) - electron paramagnetic resonance , luminescence , acceptor , photoluminescence , recombination , afterglow , oxygen , impurity , shallow donor , vacancy defect , doping , materials science , electron nuclear double resonance , atomic physics , chemistry , crystallography , nuclear magnetic resonance , condensed matter physics , physics , optoelectronics , organic chemistry , biochemistry , gamma ray burst , astronomy , gene
The structure of oxygen‐related luminescence centres in nominally undoped and Y 2 O 3 doped AlN ceramics was investigated by electron paramagnetic resonance (EPR), electron nuclear double resonance (ENDOR) and optically‐detected EPR. The photoluminescence‐detected EPR lines having g ‐values of 1.990 and 2.008 were assigned to a recombination between neighbouring donor and acceptor pairs. The two EPR lines at g = 1.987 and 2.003 detected via the recombination luminescence in the afterglow are thought to be due to a recombination between the same, but distant donor and acceptor pairs. The donor was previously speculated to be an electron trapped on an oxygen impurity which substitutes for a nitrogen on a regular lattice site. The defect structure of the acceptor was established by ENDOR to be a hole trapped on an O N –v Al complex (O N oxygen on a regular N site, v Al Al vacancy). The measured superhyperfine interaction is caused by two equivalent 27 Al nuclei both with a = ±27.0 MHz.