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Binding Energy of Hydrogen‐Like Impurities in a Thin Semiconductor Wire with Complicated Dispersion Law
Author(s) -
Avetisyan A.A.,
Djotyan A.P.,
Kazaryan E.M.,
Poghosyan B.G.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200004)218:2<441::aid-pssb441>3.0.co;2-1
Subject(s) - bohr radius , radius , impurity , condensed matter physics , dispersion (optics) , semiconductor , binding energy , materials science , atomic physics , physics , quantum mechanics , optoelectronics , computer security , exciton , computer science
The binding energy of a hydrogen‐like impurity in a thin size‐quantized wire of A 3 B 5 ‐type semiconductors with Kane's dispersion law has been calculated as a function of the radius of the wire and the location of the impurity with respect to the axis of the wire, using a variational approach. It is shown that when the wire radius is less than the Bohr radius of the impurity, the nonparabolicity of the dispersion law of charge carriers leads to a considerable increase of the binding energy.