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Amplification of Brillouin Mode in Transversely Magnetized Doped Centrosymmetric Semiconductors
Author(s) -
Jat K. L.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199712)204:2<845::aid-pssb845>3.0.co;2-9
Subject(s) - brillouin scattering , electrostriction , brillouin zone , magnetic field , optics , condensed matter physics , electric field , excitation , semiconductor , polarization (electrochemistry) , materials science , laser , physics , optoelectronics , chemistry , quantum mechanics , piezoelectricity , composite material
Based upon the electromagnetic treatment, stimulated Brillouin scattering (SBS) in a centrosymmetric, doped semiconductor which is subjected to a transverse magnetic field is investigated analytically. The origin of this nonlinear interaction is considered to be in the third‐order optical susceptibility arising due to nonlinear current density and acousto‐optical polarization of the medium. The threshold condition is obtained for the onset of the SBS. The effective Brillouin susceptibility, resulting gain, transmitted intensity and Brillouin efficiency of a cell are determined using the coupled mode scheme. The effect of magnetic field and doping on threshold field and Brillouin gain is also studied. Numerical estimation are made for n‐InSb at 77 K duly shined by a pulsed 10.6 μm CO 2 laser. The gain constant is significantly enhanced under high power pulsed excitation below the damage threshold and under the influence of a transverse magnetostatic field when the cyclotron frequency is less than the acoustic wave frequency. The required threshold electric field for the onset of the SBS process is also reduced significantly in presence of a magnetostatic field. It is found that the gain due to the acousto‐optical process is identical with that obtained due to electrostriction.