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Positron Lifetime in Elemental Semiconductors in the Generalized Gradient Approximation
Author(s) -
LiMing W.,
Panda B. K.,
Fung S.,
Beling C. D.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199712)204:2<679::aid-pssb679>3.0.co;2-q
Subject(s) - pseudopotential , positron , diamond , semiconductor , atomic physics , local density approximation , electron , physics , materials science , condensed matter physics , nuclear physics , electronic structure , quantum mechanics , composite material
Positron lifetimes in bulk elemental semiconductors diamond, Si and Ge are calculated in this work. The electron density is determined from the empirical pseudopotential method. The positron density is calculated in the point‐core approximation. The electron–positron correlation potential and the enhancement factor are treated in the generalised gradient approximation. The calculated positron lifetimes are in good agreement with experiments.