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Electronic Structure Calculation for (GaAs) 1 (AlAs) 1 Monolayer Superlattice
Author(s) -
Ferhat M.,
Zaoui A.,
Certier M.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199712)204:2<673::aid-pssb673>3.0.co;2-d
Subject(s) - superlattice , pseudopotential , monolayer , condensed matter physics , electronic band structure , materials science , electronic structure , electronic band , band gap , physics , nanotechnology
The electronic structure of the (GaAs) 1 (AlAs) 1 (001) monolayer superlattice is calculated with the empirical pseudopotential method. This method is used to fit the experimental data related to the electronic structures of GaAs, AlAs and GaAs/AlAs superlattice. The obtained band gaps, band structures and charge densities are in agreement with both the experimental and theoretical results.