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Ab‐initio Calculation of the Electronic Spectrum of a n‐Type δ‐Doped GaAs/Ga x Al 1—x As Heterojunction
Author(s) -
Evangelisti M.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199712)204:2<653::aid-pssb653>3.0.co;2-l
Subject(s) - heterojunction , doping , dopant , x ray absorption spectroscopy , fermi level , materials science , ab initio , condensed matter physics , density of states , electron , electronic structure , electron density , fermi gas , optoelectronics , absorption spectroscopy , chemistry , physics , optics , organic chemistry , quantum mechanics
For temperature zero we study the electronic spectrum of the two‐dimensional electron gas which exists in n‐type δ‐doped GaAs in proximity of a GaAs/Ga x Al 1— x As heterojunction. Wave functions, electron subband energies, densities of states, Fermi level and potential are self‐consistently calculated as functions of the dopant concentrations and distributions. Our calculations show how the limitations in 2D electron density in selectively doped heterostructures can be overcome with the δ‐doping technique. The density enhancement in the GaAs channel leads to a mobility improvement, making this system attractive for improved transistor applications.