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Femtosecond Study of Carrier Cooling and Exciton Formation in the Layered III–VI Semiconductor GaSe
Author(s) -
Nüsse S.,
Haring Bolivar P.,
Kurz H.,
Klimov V.,
Lévy F.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199711)204:1<98::aid-pssb98>3.0.co;2-g
Subject(s) - exciton , femtosecond , phonon , semiconductor , photoluminescence , relaxation (psychology) , materials science , condensed matter physics , lattice (music) , slow cooling , molecular physics , optoelectronics , chemistry , optics , physics , laser , psychology , social psychology , acoustics , metallurgy
We give a comprehensive study of carrier cooling and exciton formation in GaSe using femtosecond time‐resolved photoluminescence. The initial subpicosecond cooling of hot carriers is due to the Fröhlich interaction with longitudinal optical E′ phonons and is followed by a slower cooling process dominated by the deformation potential interaction with nonpolar optical A′ 1 phonons. The subsequent formation of excitons and their spectral relaxation is studied at different carrier densities, detection energies and lattice temperatures.