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Interwell Carrier Distribution in InAlGaAs Quantum Well Laser Structures
Author(s) -
Marcinkevičius S.,
Hillmer H.,
Lösch R.,
Fröjdh K.,
Olin U.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199711)204:1<577::aid-pssb577>3.0.co;2-3
Subject(s) - thermionic emission , photoluminescence , quantum well , laser , optoelectronics , materials science , diffusion , condensed matter physics , optics , physics , electron , quantum mechanics
Interwell carrier transport and distribution has been studied at room temperature by time‐resolved photoluminescence in custom‐designed InAlGaAs/InP quantum well laser structures with an enlarged well. The experiments have been successfully described by a model which includes thermionic capture/emission over the quantum well interfaces and drift/diffusion in the barrier regions. In the InAlGaAs structures, a considerable increase of the interwell carrier transport velocity, as compared to InGaAsP, is observed.