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Carrier Dynamics and Lasing in Graded Index Separate Confinement Zn 1—x Cd x Se Quantum Wells
Author(s) -
Calcagnile L.,
Lomascolo M.,
Cingolani R.,
Sorba L.,
Vanzetti L.,
Franciosi A.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199711)204:1<552::aid-pssb552>3.0.co;2-v
Subject(s) - lasing threshold , photoluminescence , excited state , quantum well , heterojunction , materials science , quantum dot , excitation , substrate (aquarium) , optoelectronics , condensed matter physics , atomic physics , physics , optics , laser , quantum mechanics , wavelength , oceanography , geology
We investigated graded index separate confinement Zn 1— x Cd x Se/ZnSe heterostructures on In 1— x Ga x As (100) substrate by using high excitation and time‐resolved photoluminescence spectroscopies. The carrier dynamics in the graded barriers and the quantum well is investigated. Our measurements show the filling of quantum well states in about ≈30 ps by depopulation of higher energy states, and the reduction of the decay time of the photoluminescence at the onset of lasing. Lasing threshold is found to be reduced by about one order of magnitude with respect to samples without graded index profile. The threshold for lasing was in the range from ≈1 to 145 kW/cm 2 when the sample temperature was varied from 10 to 300 K. In short cavities we observed lasing from excited energy states.