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Anisotropic Hole Velocity Overshoot in GaAs and Si
Author(s) -
Tagawa Y.,
Awano Y.,
Yokoyama N.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199711)204:1<545::aid-pssb545>3.0.co;2-n
Subject(s) - velocity overshoot , velocity saturation , saturation velocity , electric field , saturation (graph theory) , anisotropy , drift velocity , condensed matter physics , transient (computer programming) , monte carlo method , materials science , physics , overshoot (microwave communication) , computational physics , optics , voltage , electrical engineering , mosfet , statistics , mathematics , transistor , quantum mechanics , combinatorics , computer science , operating system , engineering
We investigate Full Band Monte Carlo simulations of the anisotropic transient hole transport in GaAs and Si for the first time. The simulation of transient hole transport in GaAs shows that under a constant electric field of 100 kV/cm, the maximum drift velocity reaches 2.2×10 7 cm/s at the room temperature, about 3 times higher than the steady‐state saturation velocity. We calculated the direction dependence of the applied electric field on the hole overshoot phenomena and found that the peak velocity at the electric field applied along [100] is about 30% higher than in the case of [110], although the saturation velocities are almost the same. Simulations of Si hole transport showed a similar type of directional dependence.