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Modeling of Submicron Si 1—x Ge x ‐Based MOSFETs by Self‐Consistent Monte Carlo Simulation
Author(s) -
Formicone G. F.,
Vasileska D.,
Ferry D. K.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199711)204:1<531::aid-pssb531>3.0.co;2-6
Subject(s) - mosfet , monte carlo method , materials science , statistical physics , electron mobility , channel (broadcasting) , computational physics , condensed matter physics , optoelectronics , electronic engineering , physics , electrical engineering , transistor , engineering , mathematics , statistics , quantum mechanics , voltage
The ensemble Monte Carlo method, self‐consistently coupled with the Poisson Solver, is used to study the high‐field electron transport properties in Si and strained Si in short channel MOSFETs. A 0.1 μm gate‐length Si and strained‐Si n‐MOSFET has been investigated and the results show a 50% current enhancement factor in the strained Si channel device.