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High‐Field Transport and Impact Ionization in Wide Bandgap Semiconductors
Author(s) -
Reigrotzki M.,
Dür M.,
Schattke W.,
Fitzer N.,
Redmer R.,
Goodnick St.M.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199711)204:1<528::aid-pssb528>3.0.co;2-j
Subject(s) - band gap , impact ionization , semiconductor , wide bandgap semiconductor , electric field , pseudopotential , materials science , monte carlo method , optoelectronics , ionization , engineering physics , electronic band structure , electronics , field (mathematics) , electron , condensed matter physics , computational physics , physics , electrical engineering , engineering , ion , mathematics , pure mathematics , statistics , quantum mechanics
High‐field transport in wide bandgap semiconductors such as GaN and ZnS is currently an area of active research due to the application of such materials for visible optical sources and high temperature electronics. In many applications, the electric fields are typically much higher than those experienced by electrons and holes in conventional electronic materials due to the large bandgap of about 3.5 to 4 eV, and hence higher breakdown fields. Thus, a complete description of high‐field transport including impact ionization utilizing the full band structure of these materials is critical. In the present work, we detail the results of full band structure Monte Carlo simulations of the transport properties of several such materials based on the empirical pseudopotential approach.