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Monte Carlo Analysis of Si/SiGe MODFET Performance Potential
Author(s) -
Roy S.,
Asenov A.,
Babiker S.,
Barker J. R.,
Beaumont S. P.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199711)204:1<525::aid-pssb525>3.0.co;2-v
Subject(s) - parasitic extraction , high electron mobility transistor , monte carlo method , oscillation (cell signaling) , microwave , materials science , transient (computer programming) , optoelectronics , electronic engineering , computational physics , physics , engineering , transistor , electrical engineering , chemistry , computer science , mathematics , voltage , quantum mechanics , biochemistry , statistics , operating system
The microwave performance potential of Si/Si 1— x Ge x pseudomorphic MODFETs is compared to that of the latest In 0.3 Ga 0.7 As pseudomorphic HEMTs, using simulations based on transient Monte Carlo calculations and accounting for realistic device parasitics. The potential cut‐off frequency of the MODFETs approach half that of the HEMTs, corresponding to the ratio of their channel velocities. However, the maximum frequency of oscillation advantages of the HEMT are sharply eroded when realistic parasitics are considered.