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Measurement of Electron Ballistic Length in p‐Doped InGaAs
Author(s) -
Teissier R.,
Pelouard J.L.,
Mollot F.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199711)204:1<521::aid-pssb521>3.0.co;2-a
Subject(s) - doping , electroluminescence , materials science , electron , optoelectronics , mean free path , ballistic conduction , layer (electronics) , physics , nanotechnology , quantum mechanics
The electroluminescence of InP/AlAs/InGaAs n–p heterodiodes is carefully analyzed as a function of temperature, p‐doping level and InGaAs layer thickness. It provides an original method to measure hot electron mean free path in p‐type InGaAs. Furthermore, this measurement can be performed for various p‐doping levels, ballistic electron energies or temperatures.