Premium
Current Instability in the Single Barrier Heterostructure Hot‐Electron Diode
Author(s) -
Krotkus A.,
Reklaitis A.,
Geizutis A.,
Asche M.,
Stasch R.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199711)204:1<504::aid-pssb504>3.0.co;2-6
Subject(s) - heterojunction , diode , electron , instability , materials science , condensed matter physics , optoelectronics , relaxation (psychology) , space charge , molecular physics , physics , psychology , social psychology , quantum mechanics , mechanics
The transport through a single barrier heterostructure hot‐electron diode (HHED) was studied both experimentally and by a Monte Carlo simulation emphasizing the S‐shaped current–voltage characteristics and the dynamics of the related instability. For a MBE grown n — ‐GaAs/AlGaAs/n — ‐GaAs structure tunable relaxation oscillations with frequencies up to 0.5 GHz have been observed at room temperature. It was numerically shown that the maximum generation frequency of the device is limited to less than 10 GHz by a slow dispersal of the space charge accumulated at the n — ‐GaAs/AlGaAs interface.