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Global Control of Front Propagation in Gate‐Driven Multilayered Structures
Author(s) -
Meixner M.,
Rodin P.,
Schöll E.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199711)204:1<493::aid-pssb493>3.0.co;2-f
Subject(s) - bistability , front (military) , physics , gate equivalent , voltage , propagation delay , optoelectronics , control theory (sociology) , transistor , control (management) , computer science , electronic engineering , engineering , gate oxide , quantum mechanics , artificial intelligence , meteorology
It is shown that a spatially distributed gate and active external control circuit allow for efficient control of the propagation of switch‐on and switch‐off fronts in gate‐driven bistable pnpn‐structures. For a voltage‐driven gate circuit the front moves with a constant speed whose value and direction are controlled by the gate potential. We present simulations demonstrating that an external gate circuit can provide both positive and negative feedback on the front dynamics and allows for tuning between accelerated, decelerated, or oscillating fronts.