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QW‐Shape‐Dependent Hot‐Electron Velocity Fluctuations in InGaAs‐Based Heterostructures
Author(s) -
Matulionis A.,
Aninkevičius V.,
Berntgen J.,
Gasquet D.,
Liberis J.,
Matulionienė I.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199711)204:1<453::aid-pssb453>3.0.co;2-v
Subject(s) - heterojunction , electric field , microwave , electron , condensed matter physics , quantum well , materials science , doping , noise (video) , fermi gas , plane (geometry) , optoelectronics , physics , optics , geometry , quantum mechanics , laser , mathematics , artificial intelligence , computer science , image (mathematics)
Hot‐electron microwave noise was measured for InAlAs/InGaAs/InAlAs/InP quantum well channels containing two‐dimensional electron gas subjected to high electric field applied parallel to the heterojunctions. The shape of the well was controlled by doping and InGaAs composition. A quasi‐triangular well was formed by using a plane of donors located in the InAlAs barrier. A quasi‐rectangular well was obtained by locating two planes of the donors on both sides of the well. A strong dependence on the well shape is observed at high electric fields (over 2 kV/cm). The results are interpreted in terms of real‐space transfer fluctuations.