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Theory of Electron Resonant Tunnelling through Localized States in the Presence of Hot Acoustic Phonons
Author(s) -
Král P.,
Sheard F. W.,
Ouali F. F.,
Challis L. J.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199711)204:1<438::aid-pssb438>3.0.co;2-j
Subject(s) - quantum tunnelling , non equilibrium thermodynamics , phonon , condensed matter physics , heterojunction , hot electron , distribution function , function (biology) , electron , physics , materials science , quantum mechanics , evolutionary biology , biology
We use nonequilibrium Green functions to consistently describe electron resonant tunnelling through localized states in the presence of hot phonons. Thereby we are able to study in details effects related to nonequilibrium steady‐states of such systems in the presence of dc bias and hot phonon fields. The method is applied to a model of a delta‐doped GaAs/AlGaAs double barrier heterostructure, where simulation of the hot phonons is performed by the change of their distribution function. The results are in qualitative agreement with the recent experiments performed on similar systems.