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Intersubband Electroluminescence from GaAs/AlGaAs Triple Barrier Resonant Tunnelling Structures
Author(s) -
Li Y. B.,
Cockburn J. W.,
Skolnick M. S.,
Duck J. P.,
Cain N.,
Grey R.,
Hill G.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199711)204:1<435::aid-pssb435>3.0.co;2-v
Subject(s) - electroluminescence , quantum tunnelling , materials science , optoelectronics , quantum well , tunnel effect , condensed matter physics , optics , physics , laser , nanotechnology , layer (electronics)
Abstract This paper reports the first observation of intersubband electroluminescence from a single period resonant tunnelling structure . The emission (λ = 8.4 μm) with a full width at half maximum of 7 meV, was observed from a GaAs/AlGaAs triple barrier structure with quantum well widths of 66 and 33 Å. The emission was coupled out of the sample by a metallic grating deposited on the surface.