Intersubband Electroluminescence from GaAs/AlGaAs Triple Barrier Resonant Tunnelling Structures | Zendy

Li Y. B. | Zendy; Cockburn J. W. | Zendy; Skolnick M. S. | Zendy; Duck J. P. | Zendy; Cain N. | Zendy; Grey R. | Zendy; Hill G. | Zendy

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Intersubband Electroluminescence from GaAs/AlGaAs Triple Barrier Resonant Tunnelling Structures

Author(s) -

Li Y. B.,

Cockburn J. W.,

Skolnick M. S.,

Duck J. P.,

Cain N.,

Grey R.,

Hill G.

Publication year - 1997

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/1521-3951(199711)204:1<435::aid-pssb435>3.0.co;2-v

Subject(s) - electroluminescence , quantum tunnelling , materials science , optoelectronics , quantum well , tunnel effect , condensed matter physics , optics , physics , laser , nanotechnology , layer (electronics)

This paper reports the first observation of intersubband electroluminescence from a single period resonant tunnelling structure . The emission (λ = 8.4 μm) with a full width at half maximum of 7 meV, was observed from a GaAs/AlGaAs triple barrier structure with quantum well widths of 66 and 33 Å. The emission was coupled out of the sample by a metallic grating deposited on the surface.

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