Premium
Studies of Phonon‐Assisted Tunnelling in a δ‐Doped Double Barrier Resonant Tunnelling Device
Author(s) -
Hill D. N.,
Cavill S. A.,
Akimov A. V.,
Ouali E. F.,
Moskalenko E. S.,
Challis L. J.,
Kent A. J.,
Sheard F. W.,
Král P.,
Henini M.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199711)204:1<431::aid-pssb431>3.0.co;2-a
Subject(s) - quantum tunnelling , phonon , condensed matter physics , doping , physics , tunnel effect , materials science
We report measurements of the change in current induced by non‐equilibrium phonons in a δ‐doped double barrier resonant structure. In addition to the anti‐Stokes and Stokes peaks resulting from tunnelling through the ground state of Si donors present in the well, two further peaks, C and D, are observed in magnetic fields >5 T. Peak D is attributed to phonon‐assisted tunnelling between two Landau levels, while C may be attributable to heating effects.