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Sequential Resonant Magnetotunneling through Landau Levels in GaAs/AlGaAs Multiple Quantum Well Structures
Author(s) -
Shimada Y.,
Hirakawa K.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199711)204:1<427::aid-pssb427>3.0.co;2-r
Subject(s) - landau quantization , quantum tunnelling , condensed matter physics , plateau (mathematics) , magnetic field , scattering , physics , cyclotron , quantum well , resonant tunneling diode , shubnikov–de haas effect , quantum , chemistry , quantum mechanics , quantum oscillations , superconductivity , mathematics , mathematical analysis , laser , fermi surface
We have investigated the tunneling current–voltage ( I – V ) characteristics of doped multiple quantum well (MQW) structures under high magnetic fields B . Strongly B ‐dependent periodic negative differential resistances (NDRs) have been observed in the first plateau‐like region of the I – V characteristics and identified to be due to the sequential resonant tunneling through successive Landau levels. Furthermore, the observed voltage spacings of the NDRs are systematically smaller than the cyclotron energy. We have extended the theory developed by Kazarinov and Suris to a finite magnetic field case and found that all the observed features are well explained by the interplay between the scattering‐assisted inter Landau‐level tunneling and the B dependence of the two‐dimensional electron supply function.