Premium
Effect of Carrier–Carrier Scattering on the Tunneling and Energy Relaxation Process in a Coupled Quantum Well
Author(s) -
Sawaki N.,
Anzai T.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199711)204:1<423::aid-pssb423>3.0.co;2-6
Subject(s) - quantum tunnelling , relaxation (psychology) , condensed matter physics , phonon , scattering , quantum , phonon scattering , quantum well , scattering rate , physics , quantum mechanics , psychology , social psychology , laser
The energy relaxation process due to emission of LA phonons in a GaAs/AlGaAs quantum well is studied with the aid of the tunneling escape process in a coupled quantum well structure. The relaxation rate is found to be much reduced if the carrier density is higher than 1×10 9 cm —2 . The relaxation time at 2×10 9 cm —2 is estimated to be 200 ps which is independent of the tunneling escape time.