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3D‐Simulation of Novel Quantum Wire Transistors
Author(s) -
Pigorsch C.,
Wegscheider W.,
Klix W.,
Stenzel R.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199711)204:1<346::aid-pssb346>3.0.co;2-r
Subject(s) - transistor , quantum , electron , quantum wire , poisson's equation , channel (broadcasting) , poisson distribution , computer science , electron transport chain , physics , schrödinger equation , statistical physics , materials science , mechanics , quantum mechanics , mathematics , chemistry , telecommunications , biochemistry , statistics , voltage
The output characteristics and the electronic behaviour of a quantum wire transistor (QWT) with a 1DEG channel have been simulated. The electron transport processes in the QWT are mainly influenced by quantum mechanical effects. A coupled microscopic/macroscopic simulation algorithm is used to calculate the electron density distribution in the electron gas under consideration of the confinement of the electrons. This algorithm includes the self‐consistent solution of the Poisson and the Schrödinger equation.