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Far‐Infrared Photoresponse of the Diagonal Magnetoresistance of the Two‐Dimensional Electron System Near the ν = 1 Spin‐Gap Quantum Hall State
Author(s) -
Yamanaka K.,
Hirakawa K.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199711)204:1<310::aid-pssb310>3.0.co;2-q
Subject(s) - condensed matter physics , magnetoresistance , quantum hall effect , heterojunction , landau quantization , electron , spin (aerodynamics) , band gap , physics , far infrared , materials science , magnetic field , optics , quantum mechanics , thermodynamics
We have investigated the far‐infrared (FIR) photoresponse of the diagonal magnetoresistance, R xx , of the two‐dimensional electron systems in AlGaAs/GaAs heterojunctions near the ν = 1 spin‐gap quantized Hall state (QHS). It is found that R xx near the ν = 1 QHS decreases when the samples are irradiated with a broadband FIR radiation. From spectroscopic measurements, the observed negative photoresponse is identified to be due to the reduction of the spin–orbit mixing between the spin‐up and the spin‐down Landau levels through the modulation of inter‐edge state distance induced by cyclotron absorption.