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Dynamics of Exciton Relaxation in GaAs V‐Shaped Quantum Wires
Author(s) -
Lomascolo M.,
Cingolani R.,
Rinaldi R.,
Reinhart F. K.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199711)204:1<279::aid-pssb279>3.0.co;2-7
Subject(s) - exciton , photoluminescence , relaxation (psychology) , excitation , condensed matter physics , polariton , phonon , scattering , atomic physics , ground state , quantum well , biexciton , materials science , molecular physics , physics , optoelectronics , optics , quantum mechanics , psychology , social psychology , laser
We present a systematic investigation of continuous wave and transient photoluminescence in GaAs V‐shaped quantum wires as a function of the excitation intensity, the excess energy of the exciting probe, and the sample temperature. Exciton localization is observed at low temperatures. Free exciton polariton transitions are monitored at intermediate temperatures through the square root temperature dependence of the decay time. At high excitation densities band filling, fast relaxation of the higher subband and slow intersubband relaxation (about 900 ps) is observed. An oscillatory behavior of the ground state decay time as a function of the excitation energy is observed in all samples. It can be explained by a modulated carrier collection efficiency into the QWires by means of a cascade of LO‐phonon scattering.