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Observation of Clear Quantized Conductance at 77 K in Self‐Organized AlGaAs/GaAs Quantum Wires by Selective Doping
Author(s) -
Yoh K.,
Takabayashi S.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199711)204:1<259::aid-pssb259>3.0.co;2-f
Subject(s) - molecular beam epitaxy , doping , conductance , materials science , quantization (signal processing) , ridge , silicon , condensed matter physics , high electron mobility transistor , optoelectronics , quantum , epitaxy , quantum dot , quantum wire , nanotechnology , physics , transistor , quantum mechanics , paleontology , layer (electronics) , voltage , computer science , computer vision , biology
We report on the novel fabrication method of quantum wires by self‐organized lateral p–n–p doping on patterned GaAs surface making use of the amphoteric nature of silicon atoms which become p‐type on (311)A slope surfaces and n‐type on narrow (100) surface of the ridge with the width of ≈100 Å. The lateral confinement energy was estimated to be of the order of a few tenth of an electron volt. We have successfully fabricated quantum wires by growing HEMT structure on patterned GaAs surface by molecular beam epitaxy and observed a clear conductance quantization at 77 K.