Premium
High Speed Quasi‐One‐Dimensional Electron Transport in InAs/AlGaSb Mesoscopic Devices
Author(s) -
Maemoto T.,
Yamamoto H.,
Konami M.,
Kajiuchi A.,
Ikeda T.,
Sasa S.,
Inoue M.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199711)204:1<255::aid-pssb255>3.0.co;2-v
Subject(s) - superlattice , mesoscopic physics , magnetoresistance , materials science , fabrication , optoelectronics , electron beam lithography , photolithography , electron , transistor , condensed matter physics , resist , magnetic field , nanotechnology , physics , voltage , quantum mechanics , medicine , alternative medicine , pathology , layer (electronics)
Fabrication and quasi‐one‐dimensional transport properties in InAs/AlGaSb quantum wires (QWs) are reported. A lateral superlattice with periodic structures along the wire was made by oxidation process by using atomic force microscope (AFM). InAs single and multiple QWs were made by using conventional photolithography and magnetoresistance of these QWs have been measured at 4.2 K. High‐field electron transport in QW transistors is also reported.