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Ultrafast Rabi Oscillations of Free‐Carrier Transitions in InP
Author(s) -
Fürst C.,
Leitenstorfer A.,
Nutsch A.,
Tränkle G.,
Zrenner A.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199711)204:1<20::aid-pssb20>3.0.co;2-4
Subject(s) - dephasing , rabi cycle , pauli exclusion principle , relaxation (psychology) , scattering , ultrashort pulse , excitation , spectroscopy , condensed matter physics , semiconductor , rabi frequency , physics , atomic physics , materials science , molecular physics , optoelectronics , optics , quantum , quantum mechanics , laser , psychology , social psychology
We report on the first observation of Rabi oscillations of continuum transitions in semiconductors, employing two‐color transmission spectroscopy with a time resolution of 10fs. Up to two Rabi cycles are observed in bulk InP for peak intensities exceeding 4 GW/cm 2 . Extremely fast phase relaxation due to carrier–carrier scattering results in a strong damping of the oscillations. Surprisingly, the measurements clearly show a decrease of the dephasing rates during the excitation pulse. We attribute this phenomenon to an increase of Pauli blocking and possibly the build‐up of screening.