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Photoluminescence from the Barrier‐X State in GaAs/InAlAs Strained Superlattices under Applied‐Bias Voltages
Author(s) -
Kuroyanagi K.,
Ohtani N.,
Egami N.,
Tominaga K.,
Ando M.,
Nakayama M.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199711)204:1<187::aid-pssb187>3.0.co;2-f
Subject(s) - photoluminescence , superlattice , biasing , materials science , electron , condensed matter physics , voltage , effective mass (spring–mass system) , optoelectronics , physics , quantum mechanics
We have studied the photoluminescence properties of GaAs/InAlAs strained superlattices as a function of applied‐bias voltage. We have detected the appearance of the photoluminescence from the first X‐electron state confined in the InAlAs barriers, resulting from the Γ–X electron resonance induced by the applied bias. From the calculations of the energies of the Γ and X states based on an effective‐mass approximation including strain effects, it is demonstrated that the above PL is applicable to probe the barrier‐X state.