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Hot Electron Scattering Rate in p‐Doped MQW Structures GaAs/AlAs
Author(s) -
Reshina I. I.,
Mirlin D. N.,
Perel V. I.,
Dobin A. Yu.,
Arganov A. G.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199711)204:1<181::aid-pssb181>3.0.co;2-2
Subject(s) - scattering , photoluminescence , doping , electron , quantum well , inelastic scattering , materials science , excitation , ionization , atomic physics , electron scattering , chemistry , condensed matter physics , molecular physics , physics , optoelectronics , optics , ion , laser , organic chemistry , quantum mechanics
We have studied inelastic hot‐electron scattering due to interaction with neutral acceptors accompanied by their excitation and ionization. Comparative studies of narrow GaAs/AlAs multiple quantum wells and bulk GaAs films were performed in the concentration range of neutral acceptors 10 18 to 10 19 cm —3 . The method of hot photoluminescence depolarization in an applied magnetic field was utilized. The scattering cross‐section in multiple quantum wells was shown to be four times smaller than in the bulk samples. A theoretical model of hot‐electron scattering by acceptors in a quantum well was developed that explains satisfactorily the experimental results.