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IR Radiation from Hot Holes in MQW InGaAs/GaAs Heterostructures under Real Space Transfer
Author(s) -
Aleskhin V. Ya.,
Andronov A. A.,
Antonov A. V.,
Bekin N. A.,
Gavrilenko V. I.,
Revin D. G.,
Malkina I. G.,
Uskova E. A.,
Zvonkov B. N.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199711)204:1<178::aid-pssb178>3.0.co;2-f
Subject(s) - heterojunction , optoelectronics , quantum well , materials science , electric field , radiation , infrared , gallium arsenide , optics , physics , laser , quantum mechanics
Infrared radiation from hot holes in multi‐quantum‐well In x Ga 1— x As/GaAs heterostructures under lateral transport has been investigated experimentally. The radiation intensity is shown to be a nonmonotonic function of the electric field due to the escape of hot holes from InGaAs quantum wells into GaAs barrier layers.