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Far‐Infrared Hole Absorption in In x Ga 1—x As/GaAs MQW Heterostructures with δ‐Doped Barriers
Author(s) -
Shastin V. N.,
Pavlov S. G.,
Muravjov A. V.,
Orlova E. E.,
Zhukavin R. Kh.,
Zvonkov B. N.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199711)204:1<174::aid-pssb174>3.0.co;2-v
Subject(s) - heterojunction , materials science , doping , electric field , optoelectronics , x ray absorption spectroscopy , infrared , absorption (acoustics) , liquid helium , excited state , absorption spectroscopy , atomic physics , optics , helium , physics , quantum mechanics , composite material
Far‐infrared optical properties of the In x Ga 1— x As/GaAs:C MQW δ‐doped heterostructures have been investigated under lateral electric field at liquid helium temperature. Hot hole p‐Ge laser (50 to 125 cm —1 ) intracavity absorption method has been used. The resonant increase of the FIR transparency of the heterostructure under applied electric field is observed. The effect is explained by the amplification on optical transitions from excited impurity states to QW states due to the spatial overlap of their wavefunctions.