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Landau Level Lifetimes in an InAs/AlSb Quantum Well Determined by a Picosecond Far‐Infrared Pump‐Probe Technique
Author(s) -
Murdin B. N.,
KamalSaadi M.,
Ciesla C. M.,
Pidgeon C. R.,
Langerak C. J. G. M.,
Stradling R. A.,
Gornik E.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199711)204:1<155::aid-pssb155>3.0.co;2-z
Subject(s) - landau quantization , picosecond , atomic physics , resonance (particle physics) , far infrared , magnetic field , spectroscopy , shubnikov–de haas effect , infrared , chemistry , laser , condensed matter physics , electron , physics , quantum oscillations , fermi gas , optics , quantum mechanics
We present measurements of Landau level lifetimes in a doped quantum well structure of InAs/AlSb using a combination of pump‐probe and saturation spectroscopy measurements. The cyclotron resonance was studied using far‐infrared radiation from a free‐electron laser has yielded the energy relaxation lifetime as a function of applied magnetic field, in the range ħω c = 14.5 to 18.5 meV. An energy of 15 meV corresponds to the magnetophonon resonance Δ l ħω c = ħω LO with Δ l = 2. The lifetime at this energy is at or below the resolution limit of the pump‐probe measurement, which is 10 ps. The results both at T = 4 K and 80 K, show that the Landau level lifetime, τ is 50 ± 5 ps off resonance. The so‐called “LO phonon bottleneck” is evidently important in quenching the relaxation away from resonance.