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Oscillatory Behavior of Relaxation of Hot Electrons in a Biased Charge Transfer Double Quantum Well
Author(s) -
Rüfenacht M.,
Sakaki H.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199711)204:1<151::aid-pssb151>3.0.co;2-e
Subject(s) - relaxation (psychology) , excited state , electron , atomic physics , photoluminescence , phonon , charge (physics) , condensed matter physics , materials science , molecular physics , chemistry , physics , optoelectronics , quantum mechanics , social psychology , psychology
The relaxation of hot electrons and holes is investigated at 8.5 K in a charge transfer double quantum well (CTDQW) structure. In a CTDQW, the middle barrier B M is lowered to allow confined levels above it. Photoluminescence measurements showed that the relaxation of electrons optically excited above B M alternated between the two wells when a reverse bias applied normally to the well layers was increased. An inhibition of LO phonon relaxation occurring near the anti‐crossing of the excited level and an intermediate level was found to be responsible for the observed oscillations. The findings suggest the use of intermediary levels to control the relaxation path and improve the efficiency of a class of devices.