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Energy Relaxation Length for Ballistic Electron Transport in SiO 2
Author(s) -
Tomita T.,
Kamakura Y.,
Taniguchi K.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199711)204:1<129::aid-pssb129>3.0.co;2-v
Subject(s) - electron , monte carlo method , electron transport chain , ballistic conduction , yield (engineering) , relaxation (psychology) , energy (signal processing) , atomic physics , materials science , physics , computational physics , chemistry , quantum mechanics , thermodynamics , mathematics , psychology , social psychology , biochemistry , statistics
Electron transport in thin SiO 2 films is investigated by using carrier separation technique. Average electron energy as a function of traveling distance in SiO 2 is obtained through the comparison between experimentally and theoretically derived quantum yield data. Quantum yield for high electron energy (≥ 5 eV) electrons is calculated with the use of full‐band Monte Carlo simulator implementing rigorous physical models. Electron transport in thin oxide layers is well described with experimentally extracted energy relaxation length depending on average electron energy.