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Auger Recombination Dynamics in Highly Excited HgCdTe
Author(s) -
Ciesla C. M.,
Murdin B. N.,
Phillips T. J.,
White A. M.,
Beattie A. R.,
Langerak C. J. G. M.,
Elliott C. T.,
Pidgeon C. R.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199711)204:1<121::aid-pssb121>3.0.co;2-q
Subject(s) - auger , auger effect , excited state , picosecond , atomic physics , recombination , degeneracy (biology) , chemistry , laser , physics , optics , biochemistry , bioinformatics , biology , gene
We present quantitative experimental and theoretical results of Auger recombination in highly excited Hg 0.795 Cd 0.205 Te. The first direct measurement of carrier density dependence of the recombination processes has been made on a picosecond timescale, with the pump–probe technique using a free‐electron laser. Over the excited carrier density range (5×10 16 to 3×10 17 cm –3 ) and at temperatures from 50 to 295 K studied experimentally, contributions from Auger, Shockley‐Read‐Hall and radiative recombination mechanisms were calculated. The Auger recombination rates were evaluated using a compact analytic form, with carrier degeneracy included, which has been shown to agree closely with more accurate calculations. Excellent agreement was obtained, with Auger‐1 dominant at all temperatures, and significantly for T > 225 K when the sample is intrinsic, the Auger‐7 contribution was found to be important.