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Hot Carrier Relaxation Dynamics in Zinc Selenide
Author(s) -
Mehendale M.,
Schroeder W. A.,
Sivananthan S.,
Pötz W.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199711)204:1<113::aid-pssb113>3.0.co;2-m
Subject(s) - femtosecond , relaxation (psychology) , zinc selenide , phonon , electron , ultrashort pulse , substrate (aquarium) , materials science , selenide , condensed matter physics , atomic physics , optoelectronics , optics , physics , laser , psychology , social psychology , oceanography , quantum mechanics , geology , selenium , metallurgy
The ultrafast relaxation dynamics of hot electrons, initially photoexcited with an excess energy of 300 meV, are monitored in a high‐quality ZnSe epilayer grown on a GaAs substrate by using a time‐resolved femtosecond differential reflection technique which exploits the intrinsic interferometric asymmetric Fabry‐Perot sample structure. The results are consistent with the expected characteristic electronic LO‐phonon emission time of 40 to 50 fs for carrier densities less than ≈ 3×10 17 cm —3 . At higher carrier densities, comparison of the experimental data with a theoretical model indicates that the slowing of the electron cooling rate is due to both screening of the Fröhlich interaction and the “hot phonon effect”.