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Reduced Cooling Rates of Electrons in Degenerately p‐Doped GaAs
Author(s) -
Hecker N. E.,
RodriguesHerzog R.,
Höpfel R. A.,
Hohenester U.,
Kocevar P.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199711)204:1<102::aid-pssb102>3.0.co;2-u
Subject(s) - doping , excitation , materials science , luminescence , monte carlo method , electron , scattering , atomic physics , femtosecond , molecular physics , optics , optoelectronics , chemistry , physics , laser , statistics , mathematics , quantum mechanics
We performed femtosecond time‐dependent luminescence measurements on highly p‐doped GaAs samples. By analysis of the temporal evolution of the luminescence spectra, we determined the energy loss rate of minority electrons created during excitation. For hole concentrations p < 2×10 19 cm —3 , it is well known that the energy loss rate increases with increasing doping concentration. In this study, we have found for p = 2×10 19 cm —3 at T sample = 100 K that the energy loss rate as a function of doping concentration exhibits a maximum. Using Monte Carlo simulations, we have been able to interpret this maximum as due to a gradual crossover from plasmon‐mediated scattering at lower hole densities to quasistatically‐screened single‐particle scattering at higher hole densities.