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Calculation of Misfit‐Dislocation Density Generated by Lattice Mismatch at the NiSi 2 –Si Interface
Author(s) -
Kikuchi A.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199709)203:1<79::aid-pssb79>3.0.co;2-a
Subject(s) - materials science , condensed matter physics , dislocation , interface (matter) , lattice (music) , silicon , linear relationship , crystallography , composite material , chemistry , optoelectronics , physics , capillary number , capillary action , acoustics , statistics , mathematics
The misfit‐dislocation density at the NiSi 2 –Si interface is obtained by extending a theory for heteroepitaxial strained layers on Si. The calculated misfit‐dislocation density is linearly related to the NiSi 2 film thickness on Si. This linear correlation gives a good explanation of previous experimental results, indicating a linear dependence of interface‐defect density on the NiSi 2 film thickness. That is, these correlations suggest that the interface‐defect level is directly related to the generation of misfit dislocations at the NiSi 2 –Si interface. Similar calculations indicate that type‐B NiSi 2 on Si(111) is thermodynamically more stable than type‐A NiSi 2 on Si(111). That is, the type‐B NiSi 2 film is the more favorable atomic structure at the NiSi 2 –Si interface, especially with a thick NiSi 2 film.