Premium
Grain Boundary Scattering in Micro‐ and Nanocrystalline Thin Semiconducting Films
Author(s) -
Gerlach E.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199709)203:1<107::aid-pssb107>3.0.co;2-6
Subject(s) - nanocrystalline material , scattering , grain boundary , materials science , dielectric , thin film , condensed matter physics , optoelectronics , optics , composite material , nanotechnology , physics , microstructure
We study grain boundary scattering in a thin (two‐dimensional) semiconducting film adjacent to dielectric materials. As examples we discuss an inversion layer at a Si surface and a semiconducting Si film embedded in non‐conducting Si. In particular we find that the scattering is reduced by image charges by about a factor of 2.