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Nitrogen Doped ZnSe Layers on GaAs
Author(s) -
Zahn D. R. T.,
Schneider A.,
Drews D.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199708)202:2<891::aid-pssb891>3.0.co;2-4
Subject(s) - full width at half maximum , molecular beam epitaxy , raman spectroscopy , nitrogen , materials science , crystallinity , doping , substrate (aquarium) , layer (electronics) , optoelectronics , analytical chemistry (journal) , epitaxy , optics , chemistry , nanotechnology , composite material , physics , organic chemistry , oceanography , chromatography , geology
Nitrogen doped ZnSe layers were grown on GaAs(100) by molecular beam epitaxy (MBE) with nitrogen provided by a rf‐plasma source. During growth Raman spectra were taken online and the results are compared to those obtained for the growth of undoped ZnSe. Significant changes occur in the intensity, position, and full width at half maximum (FWHM) of the observed phonon modes. These first results indicate that both the substrate and the layer are affected in terms of strain evolution and crystallinity, respectively.