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Self‐Organized Growth of II–VI Wide Bandgap Quantum Dot Structures
Author(s) -
Zhu Z.,
Kurtz E.,
Arai K.,
Chen Y. F.,
Bagnall D. M.,
Tomashini P.,
Lu F.,
Sekiguchi T.,
Yao T.,
Yasuda T.,
Segawa Y.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199708)202:2<827::aid-pssb827>3.0.co;2-8
Subject(s) - quantum dot , wetting layer , nucleation , materials science , optoelectronics , layer (electronics) , nanotechnology , facet (psychology) , band gap , chemistry , psychology , social psychology , organic chemistry , personality , big five personality traits
We present our recent investigations on the self‐organized growth and optical properties of quantum structures including CdSe quantum dots (QDs) embedded in ZnSe, ZnSe QDs in ZnS, and ZnO quantum pyramids. The self‐organized mechanism is shown to play an important role in the formation of CdSe QDs on ZnSe(111). The ZnSe QDs are found to form on a 1 ML thick ZnSe wetting layer embedded in ZnS(100). The self‐organized ZnO quantum pyramids form on ZnO(0001) buffer layers through preferred facet nucleation rather than strain‐induced islanding.